Demonstration of Si homojunction far-infrared detectors
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چکیده
A 48 mm cutoff wavelength (lc) Si far-infrared ~FIR! detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p emitter layers and intrinsic layers! is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.360.1 A/W at 27.5 mm and detectivity D* of 6.6310 cmAHz/W. The lc and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors ~40–200 mm! with high performance and tailorable lcs can be realized using higher emitter layer doping concentrations. © 1998 American Institute of Physics. @S0003-6951~98!03818-2#
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تاریخ انتشار 1998